Authors
Jesus D. Quesada Angarita, Alejandro M. Martinez Torres, Gladys O. Ducoudray Acevedo
Abstract
This report presents the properties of Silicon (Si) and heterojunction materials and compares them in terms of mobility and thermal conductivity. Designs and simulations of two Low-Noise Amplifiers (LNAs) implemented in Silicon (Si) and Gallium Arsenide (GaAs) technologies. They were designed to operate between the L & S bands of the radio frequency (RF) spectrum (1GHz – 2.5GHz). The study aims to compare the performance of the two technologies in terms of noise figure and frequency range. Equations used in the design and simulations, along with schematics for both LNAs are presented and discussed. Lastly, a programmable Winner Takes All Rank Order filter (WTAROF) is shown as a potential circuit to handle spurious noise.